MRAM, Space Memory – 3D PLUS

Radiation-tolerant MRAM (Magneto Resistive Random Access Memory) from 3D PLUS  provides high-reliability memory for space missions. MRAM stores data using magnetic polarization, making it an intrinsic radiation-hardened non-volatile memory cell that is immune to Single Event Upsets (SEUs) while offering SRAM-speed performance.

Leveraging Everspin technology, these 3.3 V MRAM stacks ensure unlimited endurance, high data retention times, and versatile data bus widths : x8b, x16b, x32b or x40b. Ideal for space-grade memory solutions, they come in SOP packages designed for high-resistance Surface Mount Technology (SMT) assembly, ensuring they can endure the extreme thermal and mechanical environments of space.

First released in 2007, 3D PLUS MRAM memories have been successfully utilized in space missions such as Glonass, Sentinel 2, and KompSat-6. Its attributes underline MRAM’s importance as a radiation-tolerant, non-volatile memory, making it essential for modern space missions, especially for processor booting, program storage, and FPGA bitstream storage.

Key Features:

• Highest density with smallest footprint ( more than 85% area savings on board)
• Unlimited read/write endurance
• 20 years data retention
• Small footprint

Radiation tolerance:

• TID > 50krad (Si)
• SEL LET_th > 85 MeV.cm²/mg
• SEU LET_th
  > 85 MeV.cm²/mg (standby)
  10 MeV.cm²/mg  (dynamic);
  σ_sat = 2E-5 cm²/bit